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AON7932 30v dual asymmetric n-channel mosfet general description product summary q1 q2 30v 30v i d (at v gs =10v) 26a 35a r ds(on) (at v gs =10v) <20m w <12m w r ds(on) (at v gs = 4.5v) <30m w <15m w 100% uis tested 100% rg tested absolute maximum ratings t a =25c unless otherwise noted the AON7932 is designed to provide a high efficienc y synchronous buck power stage with optimal layout an d board space utilization. it includes two specializ ed mosfets in a dual power dfn3x3a package. the q1 "high side" mosfet is designed to minimize switchin g losses. the q2 "low side" mosfet use advance trenc h technology with a monolithically integrated schotty to provide excellent r ds(on) and low gate charge. the AON7932 is well suited for use in compact dc/dc converter applications. v ds power dfn3x3a top view bottom view g1 d1 d1 d1 d1 (s1/d2) g2 s2 s2 s2 top view bottom view symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg parameter symbol typ q1 max q1 typ q2 max q2 t 10s 40 50 40 50 steady-state 70 90 70 90 steady-state r q jc 4.5 5.4 4.2 5 maximum junction-to-case c/w c/w maximum junction-to-ambient a d r q ja maximum junction-to-ambient a c/w 18 t a =70c t a =25c i dsm t c =100c power dissipation b p d t c =25c max q2 16 20 12 35 power dissipation a p dsm t a =70c t a =25c parameter units units 17 16 14 a mj w 6.5 vv a 30 5.3 absolute maximum ratings t a =25c unless otherwise noted a i d t c =25c t c =100c 70 8.1 22 26 max q1 gate-source voltage drain-source voltage continuous drain current thermal characteristics avalanche energy l=0.1mh c 110 6.6 avalanche current c continuous drain current pulsed drain current c 0.9 0.9 23 junction and storage temperature range -55 to 150 c 25 9 10 1.4 1.4 w rev 2: oct 2011 www.aosmd.com page 1 of 11
AON7932 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.4 1.9 2.4 v i d(on) 70 a 16 20 t j =125c 24 29 23 30 m w g fs 33 s v sd 0.75 1 v i s 20 a c iss 300 380 460 pf c oss 110 160 210 pf c rss 7 13 22 pf r g 0.7 1.5 2.3 w q g (10v) 5.4 6.5 nc q g (4.5v) 2.3 nc q gs 1.3 nc q gd 1 nc t d(on) 10 ns t 3 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =2.3 w , gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance total gate charge v gs =10v, v ds =15v, i d =6.6a gate source charge gate drain charge total gate charge on state drain current i s =1a,v gs =0v v ds =5v, i d =6.6a v gs =4.5v, i d =5.3a forward transconductance diode forward voltage v gs =10v, v ds =5v v gs =10v, i d =6.6a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w v gs =0v, v ds =15v, f=1mhz switching parameters q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v t r 3 ns t d(off) 15 ns t f 5 ns t rr 6.8 8.5 10.2 ns q rr 12.8 16 19.2 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =6.6a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =2.3 w , r gen =3 w turn-off fall time i f =6.6a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with ta=25 c. rev 2: oct 2011 www.aosmd.com page 2 of 11
AON7932 q1-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 3 6 9 12 15 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =5.3a v gs =10v i d =6.6a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 4v 10v 3.5v 7v 4.5v 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 15 20 25 30 35 40 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =6.6a 25 c 125 c rev 2: oct 2011 www.aosmd.com page 3 of 11
AON7932 q1-channel: typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 1ms 100us dc r ds(on) limited t j(max) =150 c t c =25 c 10 m s 0 2 4 6 8 10 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - c oss c rss v ds =15v i d =6.6a t j(max) =150 c t c =25 c figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =5.4 c/w rev 2: oct 2011 www.aosmd.com page 4 of 11
AON7932 q1-channel: typical electrical and thermal characteristics 17 52 10 0 18 1.0 10.0 100.0 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de - rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =90 c/w rev 2: oct 2011 www.aosmd.com page 5 of 11
AON7932 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =55c 500 i gss 100 na v gs(th) gate threshold voltage 1.1 1.6 2.1 v i d(on) 110 a 10 12 t j =125c 15 18 12 15 m w g fs 50 s v sd 0.45 0.7 v i s 30 a c iss 810 1020 1230 pf c oss 77 111 150 pf c rss 45 75 130 pf r g 0.5 1 1.5 w q g (10v) 19 23 nc q g (4.5v) 9 nc q gs 4 nc q gd 3 nc t d(on) 11 ns t 5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =1.8 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge i s =1a,v gs =0v gate source charge gate drain charge v gs =10v, v ds =15v, i d =8.1a reverse transfer capacitance on state drain current i d =10ma, v gs =0v diode forward voltage v ds =v gs i d =250 m a v ds =0v, v gs = 12v v gs =10v, v ds =5v gate-body leakage current static drain-source on-resistance i dss q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage zero gate voltage drain current ma r ds(on) m w v ds =5v, i d =8.1a v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge forward transconductance v gs =4.5v, i d =6.5a v gs =10v, i d =8.1a t r 5 ns t d(off) 29 ns t f 6 ns t rr 4 5.4 7 ns q rr 4 5.3 7 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =8.1a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 w , r gen =3 w turn-off fall time i f =8.1a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 2: oct 2011 www.aosmd.com page 6 of 11
AON7932 q2-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 4 8 12 16 20 0 3 6 9 12 15 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6.5a v gs =10v i d =8.1a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 3v 10v vgs=2.5v 3.5v 40 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 30 35 40 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =8.1a 25 c 125 c rev 2: oct 2011 www.aosmd.com page 7 of 11
AON7932 q2-channel: typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - 0 2 4 6 8 10 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8.1a t j(max) =150 c t c =25 c 40 figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =5 c/w rev 2: oct 2011 www.aosmd.com page 8 of 11
AON7932 q2-channel: typical electrical and thermal characteristics 17 52 10 0 18 1 10 100 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de - rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note g) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note g) r q ja =90 c/w rev 2: oct 2011 www.aosmd.com page 9 of 11
AON7932 q2-channel: typical electrical and thermal characteristics 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 i r (a) temperature (c) figure 17: diode reverse leakage current vs. junction temperature v ds =15v v ds =30v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 50 100 150 200 v sd (v) temperature (c) figure 18: diode forward voltage vs. junction temperature i s =1a 10a 20a 5a 0 2 4 6 8 10 0 4 8 12 16 0 5 10 15 20 25 30 i rm (a) q rr (nc) i s (a) figure 18: diode reverse recovery charge and peak di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 0 5 10 15 20 25 30 s t rr (ns) i s (a) figure 19: diode reverse recovery time and di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s s figure 18: diode reverse recovery charge and peak current vs. conduction current 0 3 6 9 12 15 0 2 4 6 8 0 200 400 600 800 1000 i rm (a) q rr (nc) di/dt (a/ m mm m s) figure 20: diode reverse recovery charge and peak current vs. di/dt 125oc 125oc 25oc 25oc i s =20a q rr i rm figure 19: diode reverse recovery time and softness factor vs. conduction current 0 0.5 1 1.5 2 2.5 3 3.5 4 2 4 6 8 10 0 200 400 600 800 1000 s t rr (ns) di/dt (a/ m mm m s) figure 21: diode reverse recovery time and softness factor vs. di/dt 125oc 25oc 25oc 125oc i s =20a t rr s rev 2: oct 2011 www.aosmd.com page 10 of 11
AON7932 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 2: oct 2011 www.aosmd.com page 11 of 11

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